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R. Degraeve

Researcher Next ID · RN-012328

Researcher · Engineering

Victoria University of Bangladesh

, Bangladesh

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Not currently recruitingFunding unknown
Works count
546
Citation count
15,377
H-index
58
i10-index
286

Research interests

Engineering
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Advanced Memory and Neural Computing
Integrated Circuits and Semiconductor Failure Analysis
Ferroelectric and Negative Capacitance Devices

Publications

  • 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

    Journal · 2011 · 10.1109/iedm.2011.6131652

  • Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

    IEEE Electron Device Letters · 2003 · 10.1109/led.2003.808844

  • A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

    Journal · 2002 · 10.1109/iedm.1995.499353

  • Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

    Journal of Applied Physics · 2001 · 10.1063/1.1385803

  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

    IEEE Transactions on Electron Devices · 1998 · 10.1109/16.662800

Current projects

    No projects listed.