Cheol Seong Hwang

Research interests

Publications

• The fundamentals and applications of ferroelectric HfO2

  Nature Reviews Materials · 2022 · 10.1038/s41578-022-00431-2

• Resistive switching materials for information processing

  Nature Reviews Materials · 2020 · https://doi.org/10.1038/s41578-019-0159-3

• An artificial nociceptor based on a diffusive memristor

  Nature Communications · 2018 · 10.1038/s41467-017-02572-3

• Review and perspective on ferroelectric HfO2-based thin films for memory applications

  MRS Communications · 2018 · 10.1557/mrc.2018.175

• Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

  Nanoscale · 2017 · 10.1039/c7nr02121f

• Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

  ACS Applied Materials & Interfaces · 2017 · 10.1021/acsami.7b15110

• Memristors for Energy‐Efficient New Computing Paradigms

  Advanced Electronic Materials · 2016 · 10.1002/aelm.201600090

• Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 ‐Based Films

  Advanced Materials · 2015 · https://doi.org/10.1002/adma.201404531

• Efficient CH3NH3PbI3 Perovskite Solar Cells Employing Nanostructured p‐Type NiO Electrode Formed by a Pulsed Laser Deposition

  Advanced Materials · 2015 · https://doi.org/10.1002/adma.201500523

• A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View

  Advanced Functional Materials · 2014 · 10.1002/adfm.201303520

• The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

  Applied Physics Letters · 2014 · 10.1063/1.4866008

• Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

  Applied Physics Letters · 2014 · 10.1063/1.4902072

• Multifunctional wearable devices for diagnosis and therapy of movement disorders

  Nature Nanotechnology · 2014 · https://doi.org/10.1038/nnano.2014.38

• Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

  Advanced Energy Materials · 2014 · 10.1002/aenm.201400610

• Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

  Applied Physics Letters · 2013 · 10.1063/1.4811483

• Emerging memories: resistive switching mechanisms and current status

  Reports on Progress in Physics · 2012 · 10.1088/0034-4885/75/7/076502

• Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

  Applied Physics Letters · 2011 · 10.1063/1.3564882

• Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

  Nanotechnology · 2011 · 10.1088/0957-4484/22/25/254002

• A Resistive Memory in Semiconducting BiFeO 3 Thin‐Film Capacitors

  Advanced Materials · 2011 · 10.1002/adma.201004317

• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

  Nature Nanotechnology · 2010 · https://doi.org/10.1038/nnano.2009.456

• Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

  Advanced Materials · 2008 · 10.1002/adma.200701085

• Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

  Applied Physics Letters · 2007 · 10.1063/1.2749846

• Identification of a determining parameter for resistive switching of TiO2 thin films

  Applied Physics Letters · 2005 · 10.1063/1.1968416

• Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

  Journal of Applied Physics · 2005 · 10.1063/1.2001146

• High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

  Applied Physics Letters · 2004 · 10.1063/1.1812832

Current projects

No projects listed.