Ádám Gali
Researcher Next ID · RN-019128
Researcher · Materials Science
ON Semiconductor (United States)
Phoenix, Hungary
- Works count
- 564
- Citation count
- 19,321
- H-index
- 74
- i10-index
- 260
Research interests
Publications
Quantum guidelines for solid-state spin defects
Nature Reviews Materials · 2021 · https://doi.org/10.1038/s41578-021-00306-y
Material platforms for defect qubits and single-photon emitters
Applied Physics Reviews · 2020 · https://doi.org/10.1063/5.0006075
Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride
npj Computational Materials · 2020 · https://doi.org/10.1038/s41524-020-0305-x
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
Nature Communications · 2019 · https://doi.org/10.1038/s41467-019-09873-9
Color Centers in Hexagonal Boron Nitride Monolayers: A Group Theory and Ab Initio Analysis
ACS Photonics · 2018 · https://doi.org/10.1021/acsphotonics.7b01442
Ab initio theory of the nitrogen‐vacancy center in diamond
Nanophotonics · 2018 · https://doi.org/10.1515/nanoph-2019-0154
Single-photon emitting diode in silicon carbide
Nature Communications · 2015 · https://doi.org/10.1038/ncomms8783
Proper Surface Termination for Luminescent Near-Surface NV Centers in Diamond
Nano Letters · 2014 · https://doi.org/10.1021/nl501927y
Electronic Structure of the Silicon Vacancy Color Center in Diamond
Physical Review Letters · 2014 · https://doi.org/10.1103/physrevlett.112.036405
Pressure and temperature dependence of the zero-field splitting in the ground state of NV centers in diamond: A first-principles study
Physical Review B · 2014 · https://doi.org/10.1103/physrevb.90.235205
Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers
Physical Review Letters · 2014 · https://doi.org/10.1103/physrevlett.112.187601
Coherent control of single spins in silicon carbide at room temperature
Nature Materials · 2014 · https://doi.org/10.1038/nmat4145
Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects
Physical Review B · 2014 · https://doi.org/10.1103/physrevb.89.075203
Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures
Physical Review Letters · 2013 · https://doi.org/10.1103/physrevlett.110.167402
A silicon carbide room-temperature single-photon source
Nature Materials · 2013 · https://doi.org/10.1038/nmat3806
Molecular-sized fluorescent nanodiamonds
Nature Nanotechnology · 2013 · https://doi.org/10.1038/nnano.2013.255
Ab initiostudy of the split silicon-vacancy defect in diamond: Electronic structure and related properties
Physical Review B · 2013 · https://doi.org/10.1103/physrevb.88.235205
Electrically driven single-photon source at room temperature in diamond
Nature Photonics · 2012 · https://doi.org/10.1038/nphoton.2012.75
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
New Journal of Physics · 2011 · https://doi.org/10.1088/1367-2630/13/2/025025
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Physical Review B · 2011 · https://doi.org/10.1103/physrevb.83.045303
Dark States of Single Nitrogen-Vacancy Centers in Diamond Unraveled by Single Shot NMR
Physical Review Letters · 2011 · https://doi.org/10.1103/physrevlett.106.157601
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
Physical Review B · 2010 · https://doi.org/10.1103/physrevb.81.153203
Theory of Spin-Conserving Excitation of the N − V − Center in Diamond
Physical Review Letters · 2009 · https://doi.org/10.1103/physrevlett.103.186404
Ab initiosupercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
Physical Review B · 2008 · https://doi.org/10.1103/physrevb.77.155206
Divacancy in 4H-SiC
Physical Review Letters · 2006 · https://doi.org/10.1103/physrevlett.96.055501
Current projects
No projects listed.