Ting‐Chang Chang

Research interests

Publications

• An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems

  Nanoscale · 2019 · 10.1039/c9nr04195h

• Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

  Nano Energy · 2019 · 10.1016/j.nanoen.2019.06.007

• High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

  ACS Applied Materials & Interfaces · 2018 · 10.1021/acsami.7b16498

• Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

  IEEE Electron Device Letters · 2016 · 10.1109/led.2016.2645946

• Physical and chemical mechanisms in oxide-based resistance random access memory

  Nanoscale Research Letters · 2015 · 10.1186/s11671-015-0740-7

• Resistance random access memory

  Materials Today · 2015 · 10.1016/j.mattod.2015.11.009

• Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics

  Advanced Functional Materials · 2015 · 10.1002/adfm.201501427

• Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

  Nano Letters · 2013 · 10.1021/nl404160u

• Building Neuromorphic Circuits with Memristive Devices

  IEEE Circuits and Systems Magazine · 2013 · 10.1109/mcas.2013.2256260

• Atomic-level quantized reaction of HfO x memristor

  Applied Physics Letters · 2013 · 10.1063/1.4802821

• Observation of conducting filament growth in nanoscale resistive memories

  Nature Communications · 2012 · https://doi.org/10.1038/ncomms1737

• Developments in nanocrystal memory

  Materials Today · 2011 · 10.1016/s1369-7021(11)70302-9

• Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

  IEEE Electron Device Letters · 2011 · 10.1109/led.2011.2104936

• Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

  Applied Physics Letters · 2011 · 10.1063/1.3609873

• Synaptic behaviors and modeling of a metal oxide memristive device

  Applied Physics A · 2011 · 10.1007/s00339-011-6296-1

• Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

  ACS Nano · 2011 · https://doi.org/10.1021/nn202983n

• Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

  Applied Physics Letters · 2010 · 10.1063/1.3514251

• Nanoscale Memristor Device as Synapse in Neuromorphic Systems

  Nano Letters · 2010 · https://doi.org/10.1021/nl904092h

• Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

  Applied Physics Letters · 2010 · 10.1063/1.3456379

• Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

  Applied Physics Letters · 2010 · 10.1063/1.3481676

• Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

  Applied Physics Letters · 2010 · 10.1063/1.3453870

• Multilevel resistive switching in Ti/CuxO/Pt memory devices

  Journal of Applied Physics · 2010 · 10.1063/1.3518514

• Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

  Solid-State Electronics · 2010 · 10.1016/j.sse.2010.08.001

• Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

  Applied Physics Letters · 2010 · 10.1063/1.3457996

• Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

  Electrochemical and Solid-State Letters · 2010 · 10.1149/1.3360181

Current projects

No projects listed.