Hideo Hosono

Research interests

Publications

• Vacancy-enabled N2 activation for ammonia synthesis on an Ni-loaded catalyst

  Nature · 2020 · 10.1038/s41586-020-2464-9

• Lead‐Free Highly Efficient Blue‐Emitting Cs3Cu2I5 with 0D Electronic Structure

  Advanced Materials · 2018 · 10.1002/adma.201804547

• Electride support boosts nitrogen dissociation over ruthenium catalyst and shifts the bottleneck in ammonia synthesis

  Nature Communications · 2015 · 10.1038/ncomms7731

• Dicalcium nitride as a two-dimensional electride with an anionic electron layer

  Nature · 2013 · 10.1038/nature11812

• Ammonia synthesis using a stable electride as an electron donor and reversible hydrogen store

  Nature Chemistry · 2012 · 10.1038/nchem.1476

• Present status of amorphous In–Ga–Zn–O thin-film transistors

  Science and Technology of Advanced Materials · 2010 · https://doi.org/10.1088/1468-6996/11/4/044305

• Material characteristics and applications of transparent amorphous oxide semiconductors

  NPG Asia Materials · 2010 · 10.1038/asiamat.2010.5

• Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

  Journal of Display Technology · 2009 · 10.1109/jdt.2009.2021582

• p -channel thin-film transistor using p-type oxide semiconductor, SnO

  Applied Physics Letters · 2008 · 10.1063/1.2964197

• Iron-Based Layered Superconductor La[O 1- x F x ]FeAs ( x = 0.05−0.12) with T c = 26 K

  Journal of the American Chemical Society · 2008 · https://doi.org/10.1021/ja800073m

• Superconductivity at 43 K in an iron-based layered compound LaO1-xFxFeAs

  Nature · 2008 · 10.1038/nature06972

• Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3

  Nature Materials · 2007 · 10.1038/nmat1821

• Recent progress in transparent oxide semiconductors: Materials and device application

  Thin Solid Films · 2007 · 10.1016/j.tsf.2006.12.125

• Transparent Conducting Oxides for Photovoltaics

  MRS Bulletin · 2007 · 10.1557/mrs2007.29

• Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

  Journal of Non-Crystalline Solids · 2006 · 10.1016/j.jnoncrysol.2006.01.073

• Iron-Based Layered Superconductor: LaOFeP

  Journal of the American Chemical Society · 2006 · 10.1021/ja063355c

• High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

  Applied Physics Letters · 2006 · 10.1063/1.2353811

• Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

  Japanese Journal of Applied Physics · 2006 · 10.1143/jjap.45.4303

• Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

  Nature · 2004 · https://doi.org/10.1038/nature03090

• Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

  Science · 2003 · https://doi.org/10.1126/science.1083212

• High-Density Electron Anions in a Nanoporous Single Crystal: [Ca 24 Al 28 O 64 ] 4 + (4 e - )

  Science · 2003 · 10.1126/science.1083842

• Transparent p -Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions

  MRS Bulletin · 2000 · 10.1557/mrs2000.148

• Deep-ultraviolet transparent conductive β-Ga2O3 thin films

  Applied Physics Letters · 2000 · 10.1063/1.1330559

• Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

  Applied Physics Letters · 1997 · 10.1063/1.119233

• P-type electrical conduction in transparent thin films of CuAlO2

  Nature · 1997 · https://doi.org/10.1038/40087

Current projects

No projects listed.