Umesh K. Mishra

Research interests

Publications

• Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

  Advanced Electronic Materials · 2017 · https://doi.org/10.1002/aelm.201600501

• Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

  Acta Materialia · 2013 · 10.1016/j.actamat.2012.10.042

• High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

  Applied Physics Letters · 2008 · 10.1063/1.2988894

• GaN-Based RF Power Devices and Amplifiers

  Proceedings of the IEEE · 2008 · https://doi.org/10.1109/jproc.2007.911060

• Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

  Nature Materials · 2006 · 10.1038/nmat1726

• High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

  IEEE Electron Device Letters · 2006 · 10.1109/led.2006.881020

• High-power AlGaN/GaN HEMTs for Ka-band applications

  IEEE Electron Device Letters · 2005 · 10.1109/led.2005.857701

• AlGaN/GaN high electron mobility transistors with InGaN back-barriers

  IEEE Electron Device Letters · 2005 · 10.1109/led.2005.860882

• Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs

  IEEE Transactions on Electron Devices · 2004 · 10.1109/ted.2004.835025

• 30-W/mm GaN HEMTs by Field Plate Optimization

  IEEE Electron Device Letters · 2004 · 10.1109/led.2003.822667

• High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

  IEEE Electron Device Letters · 2004 · 10.1109/led.2004.824845

• AlGaN/GaN HEMTs-an overview of device operation and applications

  Proceedings of the IEEE · 2002 · https://doi.org/10.1109/jproc.2002.1021567

• Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

  Applied Physics Letters · 2002 · 10.1063/1.1490396

• Very-high power density AlGaN/GaN HEMTs

  IEEE Transactions on Electron Devices · 2001 · 10.1109/16.906455

• AlGaN/AlN/GaN high-power microwave HEMT

  IEEE Electron Device Letters · 2001 · 10.1109/55.954910

• Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

  IEEE Transactions on Electron Devices · 2001 · 10.1109/16.936500

• The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

  IEEE Transactions on Electron Devices · 2001 · https://doi.org/10.1109/16.906451

• AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

  Journal of Applied Physics · 2001 · 10.1063/1.1412273

• Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

  Applied Physics Letters · 2000 · https://doi.org/10.1063/1.126940

• Heavy doping effects in Mg-doped GaN

  Journal of Applied Physics · 2000 · 10.1063/1.372098

• Coupling of InGaN quantum-well photoluminescence to silver surface plasmons

  Physical review. B, Condensed matter · 1999 · 10.1103/physrevb.60.11564

• Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

  Journal of Applied Physics · 1999 · 10.1063/1.371396

• Electrical characterization of GaN p-n junctions with and without threading dislocations

  Applied Physics Letters · 1998 · 10.1063/1.122057

• Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

  Applied Physics Letters · 1998 · 10.1063/1.122350

• Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

  Applied Physics Letters · 1997 · 10.1063/1.120191

Current projects

No projects listed.