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Xinqiang Wang

Researcher Next ID · RN-023186

Researcher · Physics and Astronomy

Zhongyuan University of Technology

Zhengzhou, Romania

Not currently recruitingFunding unknown
Works count
664
Citation count
11,950
H-index
55
i10-index
301

Research interests

Physics and Astronomy
Materials Science
Engineering
GaN-based semiconductor devices and materials
Ga2O3 and related materials
ZnO doping and properties
Semiconductor Quantum Structures and Devices
Semiconductor materials and devices

Publications

  • Harnessing Hydrogen Spillover by Lattice Strain for Enhanced Photocatalytic Hydrogen Evolution of ZnIn 2 S 4

    ACS Catalysis · 2025 · 10.1021/acscatal.4c07308

  • Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals

    Science · 2024 · 10.1126/science.ado6038

  • Focus on perovskite emitters in blue light-emitting diodes

    Light Science & Applications · 2023 · 10.1038/s41377-023-01206-2

  • Dual Antiplatelet Therapy vs Alteplase for Patients With Minor Nondisabling Acute Ischemic Stroke

    JAMA · 2023 · https://doi.org/10.1001/jama.2023.7827

  • Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate

    Nature Communications · 2023 · 10.1038/s41467-023-38178-1

  • Inelastic phonon transport across atomically sharp metal/semiconductor interfaces

    Nature Communications · 2022 · 10.1038/s41467-022-32600-w

  • Designed growth of large bilayer graphene with arbitrary twist angles

    Nature Materials · 2022 · 10.1038/s41563-022-01361-8

  • Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

    Advanced Materials · 2022 · 10.1002/adma.202109889

  • Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

    Advanced Materials · 2022 · 10.1002/adma.202109765

  • Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

    Advanced Functional Materials · 2020 · 10.1002/adfm.202008452

  • High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

    Scientific Reports · 2016 · 10.1038/srep35934

  • High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

    Advanced Materials · 2016 · 10.1002/adma.201600990

  • Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

    Nature Nanotechnology · 2014 · https://doi.org/10.1038/nnano.2014.183

  • High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

    Applied Physics Express · 2012 · 10.1143/apex.5.015502

  • Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

    Applied Physics Letters · 2007 · 10.1063/1.2456132

  • Phonon lifetimes and phonon decay in InN

    Applied Physics Letters · 2005 · 10.1063/1.1940124

  • Molecular beam epitaxy growth of GaN, AlN and InN

    Progress in Crystal Growth and Characterization of Materials · 2004 · 10.1016/j.pcrysgrow.2005.03.002

  • X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition

    Journal of Crystal Growth · 2003 · 10.1016/s0022-0248(02)02481-8

  • Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

    Journal of Crystal Growth · 2002 · 10.1016/s0022-0248(02)01569-5

  • Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

    Journal of Crystal Growth · 2001 · 10.1016/s0022-0248(01)01367-7

Current projects

    No projects listed.