Xinqiang Wang
Researcher Next ID · RN-023186
Researcher · Physics and Astronomy
Zhongyuan University of Technology
Zhengzhou, Romania
- Works count
- 664
- Citation count
- 11,950
- H-index
- 55
- i10-index
- 301
Research interests
Publications
Harnessing Hydrogen Spillover by Lattice Strain for Enhanced Photocatalytic Hydrogen Evolution of ZnIn 2 S 4
ACS Catalysis · 2025 · 10.1021/acscatal.4c07308
Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals
Science · 2024 · 10.1126/science.ado6038
Focus on perovskite emitters in blue light-emitting diodes
Light Science & Applications · 2023 · 10.1038/s41377-023-01206-2
Dual Antiplatelet Therapy vs Alteplase for Patients With Minor Nondisabling Acute Ischemic Stroke
JAMA · 2023 · https://doi.org/10.1001/jama.2023.7827
Multimodal dynamic and unclonable anti-counterfeiting using robust diamond microparticles on heterogeneous substrate
Nature Communications · 2023 · 10.1038/s41467-023-38178-1
Inelastic phonon transport across atomically sharp metal/semiconductor interfaces
Nature Communications · 2022 · 10.1038/s41467-022-32600-w
Designed growth of large bilayer graphene with arbitrary twist angles
Nature Materials · 2022 · 10.1038/s41563-022-01361-8
Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity
Advanced Materials · 2022 · 10.1002/adma.202109889
Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously
Advanced Materials · 2022 · 10.1002/adma.202109765
Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source
Advanced Functional Materials · 2020 · 10.1002/adfm.202008452
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
Scientific Reports · 2016 · 10.1038/srep35934
High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure
Advanced Materials · 2016 · 10.1002/adma.201600990
Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2
Nature Nanotechnology · 2014 · https://doi.org/10.1038/nnano.2014.183
High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
Applied Physics Express · 2012 · 10.1143/apex.5.015502
Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix
Applied Physics Letters · 2007 · 10.1063/1.2456132
Phonon lifetimes and phonon decay in InN
Applied Physics Letters · 2005 · 10.1063/1.1940124
Molecular beam epitaxy growth of GaN, AlN and InN
Progress in Crystal Growth and Characterization of Materials · 2004 · 10.1016/j.pcrysgrow.2005.03.002
X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition
Journal of Crystal Growth · 2003 · 10.1016/s0022-0248(02)02481-8
Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions
Journal of Crystal Growth · 2002 · 10.1016/s0022-0248(02)01569-5
Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition
Journal of Crystal Growth · 2001 · 10.1016/s0022-0248(01)01367-7
Current projects
No projects listed.