Shuji Nakamura

Research interests

Publications

• Prospects for LED lighting

  Nature Photonics · 2009 · https://doi.org/10.1038/nphoton.2009.32

• Strain-induced polarization in wurtzite III-nitride semipolar layers

  Journal of Applied Physics · 2006 · 10.1063/1.2218385

• Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

  Nature Materials · 2006 · 10.1038/nmat1726

• Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

  Applied Physics Letters · 2004 · 10.1063/1.1645992

• Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

  · 2000 · 10.1201/9781482268065

• The Blue Laser Diode

  · 2000 · 10.1007/978-3-662-04156-7

• Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

  Japanese Journal of Applied Physics · 1999 · 10.1143/jjap.38.3976

• The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

  Science · 1998 · https://doi.org/10.1126/science.281.5379.956

• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

  Applied Physics Letters · 1998 · 10.1063/1.120688

• Recombination dynamics of localized excitons in In0.20 Ga0.80 N- In0.05 Ga0.95 N multiple quantum wells

  Physical review. B, Condensed matter · 1997 · 10.1103/physrevb.55.r1938

• The Blue Laser Diode: GaN based Light Emitters and Lasers

  CERN Document Server (European Organization for Nuclear Research) · 1997 · https://doi.org/10.1007/978-3-662-03462-0

• The Blue Laser Diode

  · 1997 · 10.1007/978-3-662-03462-0

• Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

  Applied Physics Letters · 1997 · 10.1063/1.118455

• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes

  Applied Physics Letters · 1996 · 10.1063/1.117816

• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

  Japanese Journal of Applied Physics · 1996 · https://doi.org/10.1143/jjap.35.l74

• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

  Applied Physics Letters · 1996 · 10.1063/1.116981

• High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

  Applied Physics Letters · 1995 · 10.1063/1.114359

• High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

  Japanese Journal of Applied Physics · 1995 · 10.1143/jjap.34.l797

• Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

  Japanese Journal of Applied Physics · 1995 · 10.1143/jjap.34.l1332

• Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

  Applied Physics Letters · 1994 · https://doi.org/10.1063/1.111832

• High-power InGaN/GaN double-heterostructure violet light emitting diodes

  Applied Physics Letters · 1993 · 10.1063/1.109374

• P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

  Japanese Journal of Applied Physics · 1993 · 10.1143/jjap.32.l8

• Hole Compensation Mechanism of P-Type GaN Films

  Japanese Journal of Applied Physics · 1992 · 10.1143/jjap.31.1258

• Thermal Annealing Effects on P-Type Mg-Doped GaN Films

  Japanese Journal of Applied Physics · 1992 · 10.1143/jjap.31.l139

• High-Power GaN P-N Junction Blue-Light-Emitting Diodes

  Japanese Journal of Applied Physics · 1991 · 10.1143/jjap.30.l1998

Current projects

No projects listed.