D. Bimberg

Research interests

Publications

• Vertical-cavity surface-emitting lasers for data communication and sensing

  Photonics Research · 2019 · 10.1364/prj.7.000121

• Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

  Physical Review B · 2008 · https://doi.org/10.1103/physrevb.77.075202

• Impact of size, shape, and composition on piezoelectric effects and electronic properties of In(Ga)As∕GaAs quantum dots

  Physical Review B · 2007 · 10.1103/physrevb.76.205324

• Size-Dependent Fine-Structure Splitting in Self-Organized InAs/GaAs Quantum Dots

  Physical Review Letters · 2005 · 10.1103/physrevlett.95.257402

• Ultralong Dephasing Time in InGaAs Quantum Dots

  Physical Review Letters · 2001 · 10.1103/physrevlett.87.157401

• InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

  Electronics Letters · 2000 · 10.1049/el:20000988

• Quantum dot heterostructures

  · 1999

• Spontaneous ordering of nanostructures on crystal surfaces

  Reviews of Modern Physics · 1999 · 10.1103/revmodphys.71.1125

• Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory

  Physical review. B, Condensed matter · 1999 · 10.1103/physrevb.59.5688

• InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

  Applied Physics Letters · 1999 · 10.1063/1.124023

• Quantum dot heterostructures: Fabrication, properties, lasers (Review)

  Semiconductors · 1998 · 10.1134/1.1187396

• Theory of random population for quantum dots

  Physical review. B, Condensed matter · 1997 · 10.1103/physrevb.55.9740

• InGaAs-GaAs quantum-dot lasers

  IEEE Journal of Selected Topics in Quantum Electronics · 1997 · 10.1109/2944.605656

• Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

  Physical review. B, Condensed matter · 1997 · 10.1103/physrevb.56.10435

• Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

  Applied Physics Letters · 1997 · 10.1063/1.120556

• Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.117419

• Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

  Physical review. B, Condensed matter · 1996 · https://doi.org/10.1103/physrevb.54.8743

• InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

  Physical review. B, Condensed matter · 1995 · 10.1103/physrevb.52.11969

• Ultranarrow Luminescence Lines from Single Quantum Dots

  Physical Review Letters · 1995 · 10.1103/physrevlett.74.4043

• Radiative recombination in type-II GaSb/GaAs quantum dots

  Applied Physics Letters · 1995 · 10.1063/1.115193

• Spontaneous Ordering of Arrays of Coherent Strained Islands

  Physical Review Letters · 1995 · 10.1103/physrevlett.75.2968

• Low threshold, large T o injectionlaser emissionfrom (InGa)As quantum dots

  Electronics Letters · 1994 · 10.1049/el:19940939

• Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

  Journal of Applied Physics · 1991 · 10.1063/1.349613

• Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

  Journal of Applied Physics · 1983 · 10.1063/1.332655

• Thermal Dissociation of Excitons Bounds to Neutral Acceptors in High-Purity GaAs

  Physical review. B, Solid state · 1971 · 10.1103/physrevb.4.3451

Current projects

No projects listed.