G. Ghibaudo

Research interests

Publications

• Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

  · 2016 · 10.1109/iedm.2016.7838346

• HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

  IEEE Transactions on Electron Devices · 2015 · 10.1109/ted.2015.2440102

• 3DVLSI with CoolCube process: An alternative path to scaling

  · 2015 · 10.1109/vlsit.2015.7223698

• Revisited parameter extraction methodology for electrical characterization of junctionless transistors

  Solid-State Electronics · 2013 · 10.1016/j.sse.2013.02.047

• Modified transmission-line method for contact resistance extraction in organic field-effect transistors

  Applied Physics Letters · 2010 · 10.1063/1.3479476

• 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

  · 2008 · 10.1109/iedm.2008.4796805

• Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

  Solid-State Electronics · 2007 · 10.1016/j.sse.2007.01.016

• Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

  IEEE Transactions on Electron Devices · 2007 · 10.1109/ted.2007.901075

• Review on high-k dielectrics reliability issues

  IEEE Transactions on Device and Materials Reliability · 2005 · https://doi.org/10.1109/tdmr.2005.845236

• Improved Split C–V Method for Effective Mobility Extraction in sub-0.1- $muhbox m$ Si MOSFETs

  IEEE Electron Device Letters · 2004 · 10.1109/led.2004.832786

• Electrical Analysis of Mechanical Stress Induced by STI in Short MOSFETs Using Externally Applied Stress

  IEEE Transactions on Electron Devices · 2004 · 10.1109/ted.2004.831358

• A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

  · 2003 · 10.1109/relphy.2002.996609

• Ultimately thin double-gate SOI MOSFETs

  IEEE Transactions on Electron Devices · 2003 · https://doi.org/10.1109/ted.2003.811371

• Electrical noise and RTS fluctuations in advanced CMOS devices

  Microelectronics Reliability · 2002 · 10.1016/s0026-2714(02)00025-2

• Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

  IEEE Transactions on Electron Devices · 2001 · 10.1109/16.936709

• Critical MOSFETs operation for low voltage/low power IC's: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations

  Microelectronic Engineering · 1997 · 10.1016/s0167-9317(97)00166-4

• Ionizing radiation induced leakage current on ultra-thin gate oxides

  IEEE Transactions on Nuclear Science · 1997 · 10.1109/23.658948

• Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structures

  Journal of Applied Physics · 1995 · 10.1063/1.360124

• Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

  physica status solidi (a) · 1991 · https://doi.org/10.1002/pssa.2211240225

• Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

  IEEE Transactions on Electron Devices · 1990 · 10.1109/16.62293

• On the theory of carrier number fluctuations in MOS devices

  Solid-State Electronics · 1989 · 10.1016/0038-1101(89)90113-5

• New method for the extraction of MOSFET parameters

  Electronics Letters · 1988 · https://doi.org/10.1049/el:19880369

• Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow

  Journal of Applied Physics · 1983 · 10.1063/1.331986

Current projects

No projects listed.