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Tadatomo Suga

Researcher Next ID · RN-033441

Researcher · Engineering

Collaborative Research Group

Sydney, Australia

Accepting doctoral researchersFunding unknown
Works count
862
Citation count
11,670
H-index
53
i10-index
262

Research interests

Engineering
Materials Science
3D IC and TSV technologies
Electronic Packaging and Soldering Technologies
Semiconductor materials and devices
Advanced MEMS and NEMS Technologies
Copper Interconnects and Reliability

Publications

  • Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

    ACS Applied Materials & Interfaces · 2020 · 10.1021/acsami.9b16959

  • High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces

    ACS Applied Materials & Interfaces · 2019 · 10.1021/acsami.9b10106

  • Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

    Scripta Materialia · 2018 · 10.1016/j.scriptamat.2018.03.016

  • Low-Temperature Bonding of Laser Diode Chips on Silicon Substrates Using Plasma Activation of Au Films

    IEEE Photonics Technology Letters · 2007 · 10.1109/lpt.2007.908642

  • Bumpless Interconnect Through Ultrafine Cu Electrodes by Means of Surface-Activated Bonding (SAB) Method

    IEEE Transactions on Advanced Packaging · 2006 · 10.1109/tadvp.2006.873138

  • Room temperature Cu–Cu direct bonding using surface activated bonding method

    Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2003 · 10.1116/1.1537716

  • Self-excited piezoelectric PZT microcantilevers for dynamic SFM—with inherent sensing and actuating capabilities

    Sensors and Actuators A Physical · 1999 · 10.1016/s0924-4247(98)00212-x

  • Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

    Japanese Journal of Applied Physics · 1998 · https://doi.org/10.1143/jjap.37.4197

  • Surface activated bonding of silicon wafers at room temperature

    Applied Physics Letters · 1996 · https://doi.org/10.1063/1.115865

  • Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

    Acta Metallurgica et Materialia · 1992 · 10.1016/0956-7151(92)90272-g

Current projects

    No projects listed.