I. A. Buyanova

Researcher Next ID · RN-034498

Researcher · Engineering

Linköping, Sweden

Accepting doctoral researchersFunding unknown

Research interests

Engineering

Materials Science

Physics and Astronomy

Semiconductor Quantum Structures and Devices

GaN-based semiconductor devices and materials

Semiconductor materials and devices

Quantum and electron transport phenomena

ZnO doping and properties

Near‐Infrared Light‐Responsive Cu‐Doped Cs2AgBiBr6
Advanced Functional Materials · 2020 · https://doi.org/10.1002/adfm.202005521
Design rules for minimizing voltage losses in high-efficiency organic solar cells
Nature Materials · 2018 · https://doi.org/10.1038/s41563-018-0128-z
Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor
Nature Materials · 2009 · https://doi.org/10.1038/nmat2385
Oxygen and zinc vacancies in as-grown ZnO single crystals
Journal of Physics D Applied Physics · 2009 · https://doi.org/10.1088/0022-3727/42/17/175411
ZnO Doped With Transition Metal Ions
IEEE Transactions on Electron Devices · 2007 · https://doi.org/10.1109/ted.2007.894371
Wide bandgap GaN-based semiconductors for spintronics
Journal of Physics Condensed Matter · 2004 · https://doi.org/10.1088/0953-8984/16/7/r03
Electronic Properties of Ga(In)NAs Alloys
MRS Internet Journal of Nitride Semiconductor Research · 2001 · https://doi.org/10.1557/s1092578300000144
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
Applied Physics Letters · 2000 · https://doi.org/10.1063/1.1311324
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
Applied Physics Letters · 1999 · 10.1063/1.124429

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