Enrico Zanoni

Research interests

Publications

• Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

  IEEE Transactions on Electron Devices · 2024 · https://doi.org/10.1109/ted.2023.3346369

• GaN-based power devices: Physics, reliability, and perspectives

  Journal of Applied Physics · 2021 · https://doi.org/10.1063/5.0061354

• The 2018 GaN power electronics roadmap

  Journal of Physics D Applied Physics · 2018 · https://doi.org/10.1088/1361-6463/aaaf9d

• Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

  IEEE Transactions on Electron Devices · 2017 · https://doi.org/10.1109/ted.2017.2728785

• Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

  IEEE Transactions on Electron Devices · 2016 · https://doi.org/10.1109/ted.2016.2553721

• Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

  IEEE Electron Device Letters · 2016 · https://doi.org/10.1109/led.2016.2530693

• Reliability and parasitic issues in GaN-based power HEMTs: a review

  Semiconductor Science and Technology · 2016 · https://doi.org/10.1088/0268-1242/31/9/093004

• Power GaN Devices

  Power electronics and power systems · 2016 · https://doi.org/10.1007/978-3-319-43199-4

• Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

  IEEE Transactions on Electron Devices · 2015 · https://doi.org/10.1109/ted.2014.2386391

• Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

  IEEE Transactions on Electron Devices · 2014 · 10.1109/ted.2014.2364855

• Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

  Japanese Journal of Applied Physics · 2014 · https://doi.org/10.7567/jjap.53.100211

• Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

  IEEE Transactions on Electron Devices · 2013 · https://doi.org/10.1109/ted.2013.2279021

• AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

  IEEE Transactions on Electron Devices · 2013 · https://doi.org/10.1109/ted.2013.2271954

• Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

  Journal of Applied Physics · 2013 · 10.1063/1.4816434

• Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

  Applied Physics Letters · 2012 · https://doi.org/10.1063/1.3678041

• Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

  IEEE Transactions on Electron Devices · 2011 · https://doi.org/10.1109/ted.2011.2160547

• A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

  Journal of Applied Physics · 2009 · https://doi.org/10.1063/1.3266014

• A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

  IEEE Transactions on Electron Devices · 2009 · 10.1109/ted.2009.2033649

• Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

  IEEE Transactions on Device and Materials Reliability · 2008 · https://doi.org/10.1109/tdmr.2008.923743

• Accelerated Life Test of High Brightness Light Emitting Diodes

  IEEE Transactions on Device and Materials Reliability · 2008 · https://doi.org/10.1109/tdmr.2008.919596

• A Review on the Reliability of GaN-Based LEDs

  IEEE Transactions on Device and Materials Reliability · 2008 · 10.1109/tdmr.2008.921527

• Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

  IEEE Transactions on Electron Devices · 2008 · https://doi.org/10.1109/ted.2008.924437

• Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

  IEEE Transactions on Electron Devices · 2006 · 10.1109/ted.2006.885681

• Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs

  IEEE Transactions on Electron Devices · 2004 · 10.1109/ted.2004.835025

• Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

  Journal of Applied Physics · 2003 · 10.1063/1.1573750

• Flash Memories

  · 1999 · 10.1007/978-1-4615-5015-0

• Flash memory cells-an overview

  Proceedings of the IEEE · 1997 · https://doi.org/10.1109/5.622505

Current projects

No projects listed.