Hiroshi Amano

Research interests

Publications

• The emergence and prospects of deep-ultraviolet light-emitting diode technologies

  Nature Photonics · 2019 · https://doi.org/10.1038/s41566-019-0359-9

• The 2018 GaN power electronics roadmap

  Journal of Physics D Applied Physics · 2018 · https://doi.org/10.1088/1361-6463/aaaf9d

• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

  Applied Physics Express · 2011 · https://doi.org/10.1143/apex.4.052101

• Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

  Applied Physics Express · 2010 · https://doi.org/10.1143/apex.3.061004

• Evidence for Two Mg Related Acceptors in GaN

  Physical Review Letters · 2009 · https://doi.org/10.1103/physrevlett.102.235501

• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

  Japanese Journal of Applied Physics · 2006 · https://doi.org/10.1143/jjap.45.9001

• Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

  Nature Materials · 2006 · https://doi.org/10.1038/nmat1726

• Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

  Applied Physics Letters · 2004 · https://doi.org/10.1063/1.1762702

• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

  Japanese Journal of Applied Physics · 2000 · https://doi.org/10.1143/jjap.39.413

• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

  Japanese Journal of Applied Physics · 1998 · https://doi.org/10.1143/jjap.37.l316

• Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

  Applied Physics Letters · 1998 · https://doi.org/10.1063/1.122247

• Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

  Applied Physics Letters · 1998 · https://doi.org/10.1063/1.122346

• Pit formation in GaInN quantum wells

  Applied Physics Letters · 1998 · https://doi.org/10.1063/1.120853

• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

  Japanese Journal of Applied Physics · 1997 · https://doi.org/10.1143/jjap.36.l382

• Shortest wavelength semiconductor laser diode

  Electronics Letters · 1996 · https://doi.org/10.1049/el:19960743

• Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

  Japanese Journal of Applied Physics · 1995 · https://doi.org/10.7567/jjap.34.l1517

• Properties of the yellow luminescence in undoped GaN epitaxial layers

  Physical review. B, Condensed matter · 1995 · https://doi.org/10.1103/physrevb.52.16702

• p -type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

  Applied Physics Letters · 1994 · https://doi.org/10.1063/1.112309

• Deep level defects in n-type GaN

  Applied Physics Letters · 1994 · https://doi.org/10.1063/1.112337

• The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

  Journal of Crystal Growth · 1993 · https://doi.org/10.1016/0022-0248(93)90354-y

• Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

  Applied Physics Letters · 1992 · https://doi.org/10.1063/1.108110

• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

  Journal of Crystal Growth · 1991 · https://doi.org/10.1016/0022-0248(91)90817-o

• Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

  Journal of Crystal Growth · 1991 · https://doi.org/10.1016/0022-0248(91)90816-n

• Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

  Journal of The Electrochemical Society · 1990 · https://doi.org/10.1149/1.2086742

• Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

  Japanese Journal of Applied Physics · 1990 · https://doi.org/10.1143/jjap.29.l205

• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

  Journal of Crystal Growth · 1989 · https://doi.org/10.1016/0022-0248(89)90200-5

• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

  Japanese Journal of Applied Physics · 1989 · https://doi.org/10.1143/jjap.28.l2112

• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

  Thin Solid Films · 1988 · https://doi.org/10.1016/0040-6090(88)90458-0

• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

  Applied Physics Letters · 1986 · https://doi.org/10.1063/1.96549

Current projects

No projects listed.