Kuniyuki Kakushima

Research interests

Publications

• Field cycling behavior and breakdown mechanism of ferroelectric Al 0.78 Sc 0.22 N films

  Japanese Journal of Applied Physics · 2022 · 10.35848/1347-4065/ac54f6

• Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

  Applied Physics Letters · 2021 · 10.1063/5.0035335

• A possible origin of the large leakage current in ferroelectric Al 1− x Sc x N films

  Japanese Journal of Applied Physics · 2021 · 10.35848/1347-4065/abe644

• GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

  IET Power Electronics · 2018 · 10.1049/iet-pel.2017.0376

• Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

  Nano Letters · 2017 · 10.1021/acs.nanolett.7b03467

• Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs

  Japanese Journal of Applied Physics · 2015 · 10.7567/jjap.54.04dn08

• Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

  Journal of Applied Physics · 2014 · 10.1063/1.4872242

• X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics

  AIP Advances · 2014 · 10.1063/1.4902017

• Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

  Applied Physics Letters · 2012 · 10.1063/1.4733356

• Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

  Microelectronics Reliability · 2011 · 10.1016/j.microrel.2011.10.019

• Interface and electrical properties of La-silicate for direct contact of high-k with silicon

  Solid-State Electronics · 2010 · 10.1016/j.sse.2010.03.005

• XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation

  Journal of The Electrochemical Society · 2009 · 10.1149/1.3268128

• Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

  Solid-State Electronics · 2008 · 10.1016/j.sse.2008.04.015

• Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

  Journal of Applied Physics · 2008 · 10.1063/1.3014033

• Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

  Applied Physics Letters · 2007 · 10.1063/1.2789392

• DNA Manipulation and Retrieval from an Aqueous Solution with Micromachined Nanotweezers

  Analytical Chemistry · 2003 · 10.1021/ac034501p

Current projects

No projects listed.