F. Ren

Research interests

Publications

• A review of Ga2O3 materials, processing, and devices

  Applied Physics Reviews · 2018 · https://doi.org/10.1063/1.5006941

• Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

  Journal of Applied Physics · 2018 · https://doi.org/10.1063/1.5062841

• Radiation damage effects in Ga 2 O 3 materials and devices

  Journal of Materials Chemistry C · 2018 · https://doi.org/10.1039/c8tc04193h

• Perspective—Opportunities and Future Directions for Ga2O3

  ECS Journal of Solid State Science and Technology · 2017 · https://doi.org/10.1149/2.0031707jss

• High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

  IEEE Electron Device Letters · 2017 · https://doi.org/10.1109/led.2017.2703609

• Review—Ionizing Radiation Damage Effects on GaN Devices

  ECS Journal of Solid State Science and Technology · 2015 · https://doi.org/10.1149/2.0251602jss

• Review of radiation damage in GaN-based materials and devices

  Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2013 · https://doi.org/10.1116/1.4799504

• Radiation effects in GaN materials and devices

  Journal of Materials Chemistry C · 2012 · https://doi.org/10.1039/c2tc00039c

• Recent advances in wide bandgap semiconductor biological and gas sensors

  Progress in Materials Science · 2009 · https://doi.org/10.1016/j.pmatsci.2009.08.003

• Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods

  Applied Physics Letters · 2005 · https://doi.org/10.1063/1.2136070

• Hydrogen-selective sensing at room temperature with ZnO nanorods

  Applied Physics Letters · 2005 · https://doi.org/10.1063/1.1949707

• Depletion-mode ZnO nanowire field-effect transistor

  Applied Physics Letters · 2004 · https://doi.org/10.1063/1.1794351

• Wide bandgap GaN-based semiconductors for spintronics

  Journal of Physics Condensed Matter · 2004 · https://doi.org/10.1088/0953-8984/16/7/r03

• GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

  Journal of Physics Condensed Matter · 2004 · https://doi.org/10.1088/0953-8984/16/29/r02

• ZnO nanowire growth and devices

  Materials Science and Engineering R Reports · 2004 · https://doi.org/10.1016/j.mser.2004.09.001

• Wide band gap ferromagnetic semiconductors and oxides

  Journal of Applied Physics · 2002 · https://doi.org/10.1063/1.1517164

• Magnetic properties of n-GaMnN thin films

  Applied Physics Letters · 2002 · https://doi.org/10.1063/1.1481533

• A Review of Dry Etching of GaN and Related Materials

  MRS Internet Journal of Nitride Semiconductor Research · 2000 · https://doi.org/10.1557/s1092578300000119

• Fabrication and performance of GaN electronic devices

  Materials Science and Engineering R Reports · 2000 · https://doi.org/10.1016/s0927-796x(00)00028-0

• GaN: Processing, defects, and devices

  Journal of Applied Physics · 1999 · https://doi.org/10.1063/1.371145

• A survey of ohmic contacts to III-V compound semiconductors

  Thin Solid Films · 1997 · https://doi.org/10.1016/s0040-6090(97)00439-2

Current projects

No projects listed.