Tibor Grasser

Research interests

Publications

• Hybrid 2D–CMOS microchips for memristive applications

  Nature · 2023 · https://doi.org/10.1038/s41586-023-05973-1

• The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

  Nature Electronics · 2021 · https://doi.org/10.1038/s41928-020-00529-x

• Transistors based on two-dimensional materials for future integrated circuits

  Nature Electronics · 2021 · https://doi.org/10.1038/s41928-021-00670-1

• Insulators for 2D nanoelectronics: the gap to bridge

  Nature Communications · 2020 · https://doi.org/10.1038/s41467-020-16640-8

• Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

  Nature Electronics · 2019 · https://doi.org/10.1038/s41928-019-0256-8

• Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

  IEEE Transactions on Electron Devices · 2019 · https://doi.org/10.1109/ted.2019.2938262

• Comphy — A compact-physics framework for unified modeling of BTI

  Microelectronics Reliability · 2018 · https://doi.org/10.1016/j.microrel.2018.04.002

• Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

  ACS Nano · 2016 · https://doi.org/10.1021/acsnano.6b04814

• The role of charge trapping in MoS 2 /SiO 2 and MoS 2 /hBN field-effect transistors

  2D Materials · 2016 · https://doi.org/10.1088/2053-1583/3/3/035004

• Bias Temperature Instability for Devices and Circuits

  Journal · 2013 · https://doi.org/10.1007/978-1-4614-7909-3

• The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

  IEEE Transactions on Electron Devices · 2011 · https://doi.org/10.1109/ted.2011.2164543

• Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

  Microelectronics Reliability · 2011 · https://doi.org/10.1016/j.microrel.2011.09.002

• The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

  Journal · 2010 · https://doi.org/10.1109/irps.2010.5488859

• Origin of NBTI variability in deeply scaled pFETs

  Journal · 2010 · https://doi.org/10.1109/irps.2010.5488856

• The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

  Journal · 2010 · https://doi.org/10.1109/irps.2010.5488858

• A two-stage model for negative bias temperature instability

  IEEE International Reliability Physics Symposium proceedings · 2009 · https://doi.org/10.1109/irps.2009.5173221

• Ubiquitous relaxation in BTI stressing—New evaluation and insights

  Journal · 2008 · https://doi.org/10.1109/relphy.2008.4558858

• A review of hydrodynamic and energy-transport models for semiconductor device simulation

  Proceedings of the IEEE · 2003 · https://doi.org/10.1109/jproc.2002.808150

Current projects

No projects listed.