Yee‐Chia Yeo

Research interests

Publications

• Spin–orbit proximity effect in graphene

  Nature Communications · 2014 · https://doi.org/10.1038/ncomms5875

• Breaking the Speed Limits of Phase-Change Memory

  Science · 2012 · https://doi.org/10.1126/science.1221561

• Electronic band structure and effective mass parameters of Ge1-xSnx alloys

  Journal of Applied Physics · 2012 · 10.1063/1.4767381

• Tunneling Field-Effect Transistor: Capacitance Components and Modeling

  IEEE Electron Device Letters · 2010 · 10.1109/led.2010.2047240

• Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

  Journal of Applied Physics · 2008 · https://doi.org/10.1063/1.2924413

• Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

  Applied Physics Letters · 2007 · https://doi.org/10.1063/1.2748366

• Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

  · 2006 · 10.1109/iedm.2006.346776

• Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters

  Nature Materials · 2006 · 10.1038/nmat1806

• 5nm-gate nanowire FinFET

  · 2004 · 10.1109/vlsit.2004.1345476

• MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations

  IEEE Transactions on Electron Devices · 2003 · 10.1109/ted.2003.812504

• 25 nm CMOS Omega FETs

  Journal · 2003 · https://doi.org/10.1109/iedm.2002.1175826

• Direct tunneling leakage current and scalability of alternative gate dielectrics

  Applied Physics Letters · 2002 · 10.1063/1.1506941

• Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

  Journal of Applied Physics · 2002 · https://doi.org/10.1063/1.1521517

• Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions

  IEEE Electron Device Letters · 2002 · 10.1109/led.2002.1004229

• Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

  IEEE Electron Device Letters · 2000 · 10.1109/55.877204

• Electronic band structures and effective-mass parameters of wurtzite GaN and InN

  Journal of Applied Physics · 1998 · https://doi.org/10.1063/1.366847

Current projects

No projects listed.