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K. L. Pey

Researcher Next ID · RN-037008

Researcher · Engineering

Singapore University of Technology and Design

Singapore, Singapore

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Accepting doctoral researchersFunding unknown
Works count
507
Citation count
8,254
H-index
38
i10-index
194

Research interests

Engineering
Physics and Astronomy
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Integrated Circuits and Semiconductor Failure Analysis
Semiconductor materials and interfaces
Ferroelectric and Negative Capacitance Devices

Publications

  • Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano · 2021 · https://doi.org/10.1021/acsnano.1c06980

  • Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

    Scientific Reports · 2018 · 10.1038/s41598-018-21138-x

  • Recommended Methods to Study Resistive Switching Devices

    Advanced Electronic Materials · 2018 · https://doi.org/10.1002/aelm.201800143

  • Designettes: An Approach to Multidisciplinary Engineering Design Education

    Journal of Mechanical Design · 2015 · 10.1115/1.4031638

  • Intrinsic nanofilamentation in resistive switching

    Journal of Applied Physics · 2013 · 10.1063/1.4794519

  • Carbon nanotube membranes with ultrahigh specific adsorption capacity for water desalination and purification

    Nature Communications · 2013 · https://doi.org/10.1038/ncomms3220

  • Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

    Journal of Electronic Materials · 2012 · https://doi.org/10.1007/s11664-012-2117-3

  • Influence of Bosch Etch Process on Electrical Isolation of TSV Structures

    IEEE Transactions on Components Packaging and Manufacturing Technology · 2011 · 10.1109/tcpmt.2011.2160395

  • Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

    Journal of Applied Physics · 2010 · 10.1063/1.3520217

  • The nature of dielectric breakdown

    Applied Physics Letters · 2008 · 10.1063/1.2974792

  • A study of thermo-mechanical stress and its impact on through-silicon vias

    Journal of Micromechanics and Microengineering · 2008 · https://doi.org/10.1088/0960-1317/18/7/075018

  • Two-dimensional analytical Mott-Gurney law for a trap-filled solid

    Applied Physics Letters · 2007 · 10.1063/1.2721382

  • Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing

    Applied Physics Letters · 2006 · 10.1063/1.2364834

  • Dielectric breakdown mechanisms in gate oxides

    Journal of Applied Physics · 2005 · https://doi.org/10.1063/1.2147714

  • Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

    Applied Physics Letters · 2003 · 10.1063/1.1611649

  • Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

    IEEE Electron Device Letters · 2002 · 10.1109/led.2002.802662

  • New salicidation technology with Ni(Pt) alloy for MOSFETs

    IEEE Electron Device Letters · 2001 · 10.1109/55.974579

  • Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

    Applied Physics Letters · 2001 · 10.1063/1.1428410

  • Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

    Applied Physics Letters · 2000 · 10.1063/1.126627

Current projects

    No projects listed.