P. Bhattacharya
Researcher Next ID · RN-037216
Researcher · Engineering
National Institute of Pharmaceutical Education and Research - Ahmedabad
Ahmedabad, India
- Works count
- 1,300
- Citation count
- 27,878
- H-index
- 78
- i10-index
- 486
Research interests
Publications
TPP: Transparent Page Placement for CXL-Enabled Tiered-Memory
Journal · 2023 · https://doi.org/10.1145/3582016.3582063
Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon
Nano Letters · 2014 · https://doi.org/10.1021/nl5015603
Room Temperature Electrically Injected Polariton Laser
Physical Review Letters · 2014 · https://doi.org/10.1103/physrevlett.112.236802
Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
Nature Communications · 2013 · https://doi.org/10.1038/ncomms2691
Solid State Electrically Injected Exciton-Polariton Laser
Physical Review Letters · 2013 · https://doi.org/10.1103/physrevlett.110.206403
InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
Applied Physics Letters · 2011 · https://doi.org/10.1063/1.3588201
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
Nano Letters · 2010 · https://doi.org/10.1021/nl101027x
Impedance spectroscopy of multiferroic PbZrxTi1−xO3∕CoFe2O4 layered thin films
Physical Review B · 2008 · https://doi.org/10.1103/physrevb.77.014111
Spin-polarized light-emitting diodes and lasers
Journal of Physics D Applied Physics · 2007 · https://doi.org/10.1088/0022-3727/40/11/r01
Structural and multiferroic properties of La-modified BiFeO3 ceramics
Journal of Applied Physics · 2007 · https://doi.org/10.1063/1.2432869
Raman scattering studies in dilute magnetic semiconductor Zn1−xCoxO
Physical Review B · 2006 · https://doi.org/10.1103/physrevb.73.245213
Magnetic and electrical properties of single-phase multiferroic BiFeO3
Journal of Applied Physics · 2005 · https://doi.org/10.1063/1.1881775
The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers
Applied Physics Letters · 2004 · https://doi.org/10.1063/1.1829158
QUANTUM DOT OPTO-ELECTRONIC DEVICES
Annual Review of Materials Research · 2004 · https://doi.org/10.1146/annurev.matsci.34.040203.111535
Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition
Materials Science and Engineering B · 2003 · https://doi.org/10.1016/s0921-5107(03)00127-2
Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
Physical Review Letters · 2001 · https://doi.org/10.1103/physrevlett.86.4930
Self-assembled InAs-GaAs quantum-dot intersubband detectors
IEEE Journal of Quantum Electronics · 1999 · https://doi.org/10.1109/3.766837
Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy
Physical review. B, Condensed matter · 1998 · https://doi.org/10.1103/physrevb.57.r9423
Far-infrared photoconductivity in self-organized InAs quantum dots
Applied Physics Letters · 1998 · https://doi.org/10.1063/1.121252
Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasers
Electronics Letters · 1996 · https://doi.org/10.1049/el:19960921
Semiconductor Optoelectronic Devices
Physics Today · 1994 · https://doi.org/10.1063/1.2808754
Properties of Lattice-Matched and Strained Indium Gallium Arsenide
Journal · 1993
Evidence for spin splitting in InxGa1−xAs/In0.52Al0.48As heterostructures as B→0
Physical review. B, Condensed matter · 1989 · https://doi.org/10.1103/physrevb.39.1411
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
Applied Physics Letters · 1988 · https://doi.org/10.1063/1.99850
Quasiperiodic GaAs-AlAs Heterostructures
Physical Review Letters · 1985 · https://doi.org/10.1103/physrevlett.55.1768
Current projects
No projects listed.