Michael J. Manfra
Researcher Next ID · RN-038202
Researcher · Engineering
Purdue University West Lafayette
West Lafayette, Norway
- Works count
- 670
- Citation count
- 14,223
- H-index
- 59
- i10-index
- 229
Research interests
Publications
InAs-Al hybrid devices passing the topological gap protocol
Physical review. B./Physical review. B · 2023 · https://doi.org/10.1103/physrevb.107.245423
A cryogenic CMOS chip for generating control signals for multiple qubits
Nature Electronics · 2021 · https://doi.org/10.1038/s41928-020-00528-y
Supercurrent rectification and magnetochiral effects in symmetric Josephson junctions
Nature Nanotechnology · 2021 · https://doi.org/10.1038/s41565-021-01009-9
Direct observation of anyonic braiding statistics
Nature Physics · 2020 · https://doi.org/10.1038/s41567-020-1019-1
Topological superconductivity in hybrid devices
Nature Physics · 2020 · https://doi.org/10.1038/s41567-020-0925-6
Evidence of topological superconductivity in planar Josephson junctions
Nature · 2019 · https://doi.org/10.1038/s41586-019-1068-8
Scaling of Majorana Zero-Bias Conductance Peaks
Physical Review Letters · 2017 · https://doi.org/10.1103/physrevlett.119.136803
Collective non-perturbative coupling of 2D electrons with high-quality-factor terahertz cavity photons
Nature Physics · 2016 · https://doi.org/10.1038/nphys3850
Noise Suppression Using Symmetric Exchange Gates in Spin Qubits
Physical Review Letters · 2016 · https://doi.org/10.1103/physrevlett.116.116801
Nonconventional Odd-Denominator Fractional Quantum Hall States in the Second Landau Level
Physical Review Letters · 2010 · https://doi.org/10.1103/physrevlett.105.246808
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
Journal of Applied Physics · 2004 · https://doi.org/10.1063/1.1719264
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
Applied Physics Letters · 2002 · https://doi.org/10.1063/1.1490147
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
Applied Physics Letters · 2001 · https://doi.org/10.1063/1.1356450
High thermoelectric figures of merit in PbTe quantum wells
Journal of Electronic Materials · 1996 · https://doi.org/10.1007/bf02659913
New MBE buffer used to eliminate backgating in GaAs MESFETs
IEEE Electron Device Letters · 1988 · https://doi.org/10.1109/55.2046
Current projects
No projects listed.