Buwen Cheng

Research interests

Publications

• Cs3Bi2Br9/BiOCl S-scheme heterojunction photocatalysts with solid built-in electric field for efficient polystyrene microplastics degradation

  Applied Catalysis B: Environmental · 2025 · 10.1016/j.apcatb.2025.125288

• Harnessing microcomb-based parallel chaos for random number generation and optical decision making

  Nature Communications · 2023 · 10.1038/s41467-023-40152-w

• 30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

  Photonics Research · 2021 · 10.1364/prj.413453

• Recent progress in GeSn growth and GeSn-based photonic devices

  Journal of Semiconductors · 2018 · 10.1088/1674-4926/39/6/061006

• Insight into the effect of ligand-exchange on colloidal CsPbBr 3 perovskite quantum dot/mesoporous-TiO 2 composite-based photodetectors: much faster electron injection

  Journal of Materials Chemistry C · 2017 · 10.1039/c7tc01611e

• Ultrathin Broadband Germanium–Graphene Hybrid Photodetector with High Performance

  ACS Applied Materials & Interfaces · 2017 · 10.1021/acsami.6b16511

• GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy

  Applied Physics Letters · 2016 · 10.1063/1.4940194

• Silicon Based GeSn p-i-n Photodetector for SWIR Detection

  IEEE photonics journal · 2016 · 10.1109/jphot.2016.2607687

• High-performance ball-milled SiOx anodes for lithium ion batteries

  Journal of Power Sources · 2016 · 10.1016/j.jpowsour.2016.11.044

• All-inorganic perovskite quantum dot/mesoporous TiO 2 composite-based photodetectors with enhanced performance

  Dalton Transactions · 2016 · 10.1039/c6dt04758k

• Coexistence and competition of multiple charge-density-wave orders in rare-earth tritellurides

  Physical Review B · 2014 · 10.1103/physrevb.90.085105

• Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides

  Optics Express · 2014 · 10.1364/oe.22.005781

• Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

  IEEE Electron Device Letters · 2013 · 10.1109/led.2012.2236880

• High-responsivity GeSn short-wave infrared p-i-n photodetectors

  Applied Physics Letters · 2013 · 10.1063/1.4801957

• Field-induced spin-flop transitions in single-crystalline CaCo 2 As 2

  Physical Review B · 2012 · 10.1103/physrevb.85.144426

• High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

  Journal · 2011 · 10.1109/iedm.2011.6131569

• Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(001) substrates

  Journal of Crystal Growth · 2011 · 10.1016/j.jcrysgro.2011.01.015

• GeSn p-i-n photodetector for all telecommunication bands detection

  Optics Express · 2011 · 10.1364/oe.19.006400

• Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix

  Physical Review B · 2005 · 10.1103/physrevb.72.195313

Current projects

No projects listed.