Christophe Detavernier

Research interests

Publications

• Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

  Advanced Electronic Materials · 2018 · https://doi.org/10.1002/aelm.201800091

• Controlling the stability of a Fe–Ni reforming catalyst: Structural organization of the active components

  Applied Catalysis B: Environmental · 2017 · https://doi.org/10.1016/j.apcatb.2017.03.025

• Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition

  Nature Communications · 2017 · https://doi.org/10.1038/s41467-017-01140-z

• Te-based chalcogenide materials for selector applications

  Scientific Reports · 2017 · https://doi.org/10.1038/s41598-017-08251-z

• Super-dry reforming of methane intensifies CO 2 utilization via Le Chatelier’s principle

  Science · 2016 · https://doi.org/10.1126/science.aah7161

• Catalyst-assisted chemical looping for CO2 conversion to CO

  Applied Catalysis B: Environmental · 2014 · https://doi.org/10.1016/j.apcatb.2014.09.007

• Delivering a Modifying Element to Metal Nanoparticles via Support: Pt–Ga Alloying during the Reduction of Pt/Mg(Al,Ga)Ox Catalysts and Its Effects on Propane Dehydrogenation

  ACS Catalysis · 2014 · https://doi.org/10.1021/cs500415e

• Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

  Nano Letters · 2014 · https://doi.org/10.1021/nl500049g

• CeO 2 -Modified Fe 2 O 3 for CO 2 Utilization via Chemical Looping

  Industrial & Engineering Chemistry Research · 2013 · https://doi.org/10.1021/ie4003574

• Germanium surface passivation and atomic layer deposition of high- k dielectrics—a tutorial review on Ge-based MOS capacitors

  Semiconductor Science and Technology · 2012 · https://doi.org/10.1088/0268-1242/27/7/074012

• Tailoring nanoporous materials by atomic layer deposition

  Chemical Society Reviews · 2011 · https://doi.org/10.1039/c1cs15091j

• High-k dielectrics for future generation memory devices (Invited Paper)

  Microelectronic Engineering · 2009 · https://doi.org/10.1016/j.mee.2009.03.045

• Modeling the Conformality of Atomic Layer Deposition: The Effect of Sticking Probability

  Journal of The Electrochemical Society · 2009 · https://doi.org/10.1149/1.3072694

• In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

  Journal of Applied Physics · 2009 · https://doi.org/10.1063/1.3110722

• Atomic layer deposition of titanium nitride from TDMAT precursor

  Microelectronic Engineering · 2008 · https://doi.org/10.1016/j.mee.2008.09.036

• Growth Kinetics and Crystallization Behavior of TiO[sub 2] Films Prepared by Plasma Enhanced Atomic Layer Deposition

  Journal of The Electrochemical Society · 2008 · https://doi.org/10.1149/1.2955724

• In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

  Thin Solid Films · 2007 · https://doi.org/10.1016/j.tsf.2007.09.037

• Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

  Nanotechnology · 2007 · https://doi.org/10.1088/0957-4484/18/50/505307

• Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

  Journal of Applied Physics · 2007 · https://doi.org/10.1063/1.2798384

• Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

  Microelectronic Engineering · 2006 · https://doi.org/10.1016/j.mee.2006.09.006

• High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation

  Journal of Applied Physics · 2005 · https://doi.org/10.1063/1.2005380

• An off-normal fibre-like texture in thin films on single-crystal substrates

  Nature · 2003 · https://doi.org/10.1038/nature02198

• Towards implementation of a nickel silicide process for CMOS technologies

  Microelectronic Engineering · 2003 · https://doi.org/10.1016/s0167-9317(03)00380-0

• Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

  Solid-State Electronics · 2000 · https://doi.org/10.1016/s0038-1101(99)00268-3

Current projects

No projects listed.