- Works count
- 787
- Citation count
- 10,914
- H-index
- 47
- i10-index
- 289
Research interests
Publications
Vertical GAAFETs for the Ultimate CMOS Scaling
IEEE Transactions on Electron Devices · 2015 · https://doi.org/10.1109/ted.2015.2414924
InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates
IEEE Electron Device Letters · 2014 · https://doi.org/10.1109/led.2014.2359579
Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET
IEEE Transactions on Electron Devices · 2014 · https://doi.org/10.1109/ted.2014.2299337
Review of FINFET technology
Journal · 2009 · https://doi.org/10.1109/soi.2009.5318794
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
Nature Physics · 2008 · https://doi.org/10.1038/nphys994
Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs
IEEE Electron Device Letters · 2007 · https://doi.org/10.1109/led.2007.891263
Impact of fin width on digital and analog performances of n-FinFETs
Solid-State Electronics · 2007 · https://doi.org/10.1016/j.sse.2007.02.003
Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective
IEEE Transactions on Electron Devices · 2006 · https://doi.org/10.1109/ted.2006.885649
Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire
Physical Review Letters · 2006 · https://doi.org/10.1103/physrevlett.97.206805
Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs
IEEE Transactions on Electron Devices · 2005 · https://doi.org/10.1109/ted.2005.848098
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification
Journal · 2005 · https://doi.org/10.1109/relphy.2005.1493117
Current projects
No projects listed.