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A. Stesmans

Researcher Next ID · RN-039829

Researcher · Engineering

KU Leuven

Leuven, Belgium

Accepting doctoral researchersFunding unknown
Works count
608
Citation count
13,998
H-index
60
i10-index
272

Research interests

Engineering
Materials Science
Physics and Astronomy
Semiconductor materials and devices
Semiconductor materials and interfaces
Silicon Nanostructures and Photoluminescence
Advancements in Semiconductor Devices and Circuit Design
Electronic and Structural Properties of Oxides

Publications

  • Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

    Nano Research · 2011 · 10.1007/s12274-011-0183-0

  • Electronic properties of hydrogenated silicene and germanene

    Applied Physics Letters · 2011 · 10.1063/1.3595682

  • Can silicon behave like graphene? A first-principles study

    Applied Physics Letters · 2010 · 10.1063/1.3489937

  • Classification and control of the origin of photoluminescence from Si nanocrystals

    Nature Nanotechnology · 2008 · https://doi.org/10.1038/nnano.2008.7

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    Journal of The Electrochemical Society · 2008 · 10.1149/1.2919115

  • Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

    Journal of Applied Physics · 2007 · 10.1063/1.2799091

  • Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

    Applied Physics Letters · 2003 · 10.1063/1.1532103

  • Internal photoemission of electrons and holes from (100)Si into HfO2

    Applied Physics Letters · 2002 · 10.1063/1.1495088

  • Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

    Journal of Applied Physics · 2002 · 10.1063/1.1436299

  • Trap-assisted tunneling in high permittivity gate dielectric stacks

    Journal of Applied Physics · 2000 · 10.1063/1.373587

  • Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

    Applied Physics Letters · 2000 · 10.1063/1.1310635

  • Structural relaxation of Pb defects at the (111)Si/ SiO2 interface as a function of oxidation temperature: The Pb -generation–stress relationship

    Physical review. B, Condensed matter · 1993 · 10.1103/physrevb.48.2418

Current projects

    No projects listed.