Eoin P. O’Reilly

Research interests

Publications

• Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

  RWTH Publications (RWTH Aachen) · 2021

• Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

  Physical Review B · 2015 · 10.1103/physrevb.91.035439

• Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides

  Physical Review B · 2013 · 10.1103/physrevb.88.214103

• Band engineering in dilute nitride and bismide semiconductor lasers

  Semiconductor Science and Technology · 2012 · 10.1088/0268-1242/27/9/094011

• Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

  Physical Review B · 2011 · 10.1103/physrevb.84.245202

• Trends in the electronic structure of dilute nitride alloys

  Semiconductor Science and Technology · 2009 · 10.1088/0268-1242/24/3/033001

• Dynamics of light propagation in spatiotemporal dielectric structures

  Physical Review E · 2007 · 10.1103/physreve.75.046607

• Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1−xNx

  Physical Review B · 2006 · 10.1103/physrevb.73.073201

• Dipole nanolaser

  Physical Review A · 2005 · 10.1103/physreva.71.063812

• Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys

  Physical Review Letters · 2004 · 10.1103/physrevlett.93.196402

• Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

  IEEE Journal of Selected Topics in Quantum Electronics · 2003 · 10.1109/jstqe.2003.819516

• A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

  IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 10.1109/jstqe.2002.801684

• (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

  Physical review. B, Condensed matter · 2001 · 10.1103/physrevb.64.121203

• (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

  Physical review. B, Condensed matter · 2001 · 10.1103/physrevb.64.121203

• Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots

  Physical review. B, Condensed matter · 2000 · 10.1103/physrevb.61.13840

• Theory of the electronic structure of GaN/AlN hexagonal quantum dots

  Physical review. B, Condensed matter · 2000 · https://doi.org/10.1103/physrevb.62.15851

• Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

  Physical Review Letters · 2000 · https://doi.org/10.1103/physrevlett.84.733

• Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys

  Solid State Communications · 1999 · 10.1016/s0038-1098(99)00361-0

• Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys

  Solid State Communications · 1999 · 10.1016/s0038-1098(99)00361-0

• Strain distributions in quantum dots of arbitrary shape

  Journal of Applied Physics · 1999 · 10.1063/1.370728

• The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

  IEEE Photonics Technology Letters · 1998 · 10.1109/68.701507

• Band-structure engineering in strained semiconductor lasers

  IEEE Journal of Quantum Electronics · 1994 · 10.1109/3.283784

• Evaluation of various approximations used in the envelope-function method

  Physical review. B, Condensed matter · 1994 · 10.1103/physrevb.50.10893

• Valence band engineering in strained-layer structures

  Semiconductor Science and Technology · 1989 · https://doi.org/10.1088/0268-1242/4/3/001

• Electronic and atomic structure of amorphous carbon

  Physical review. B, Condensed matter · 1987 · https://doi.org/10.1103/physrevb.35.2946

• Electronic structure of amorphous III-V and II-VI compound semiconductors and their defects

  Physical review. B, Condensed matter · 1986 · 10.1103/physrevb.34.8684

• Theory of defects in vitreous silicon dioxide

  Physical review. B, Condensed matter · 1983 · https://doi.org/10.1103/physrevb.27.3780

Current projects

No projects listed.