K. Lorenz

Research interests

Publications

• Unravelling the secrets of the resistance of GaN to strongly ionising radiation

  Communications Physics · 2021 · 10.1038/s42005-021-00550-2

• Suitability of 3D printed pieces of nanocrystalline zirconia for dental applications

  Dental Materials · 2020 · 10.1016/j.dental.2020.01.006

• Implantation damage formation in a-, c- and m-plane GaN

  Acta Materialia · 2016 · 10.1016/j.actamat.2016.10.020

• High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

  Applied Physics Letters · 2014 · 10.1063/1.4891761

• Radiation damage formation and annealing in GaN and ZnO

  Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2011 · 10.1117/12.879402

• It's not easy being green: Strategies for all‐nitrides, all‐colour solid state lighting

  physica status solidi (RRL) - Rapid Research Letters · 2011 · 10.1002/pssr.201100206

• Identification of the prime optical center in GaN:Eu3+

  Physical Review B · 2010 · 10.1103/physrevb.81.085209

• Radiation damage in ZnO ion implanted at 15 K

  Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2009 · 10.1016/j.nimb.2009.05.031

• Optical energies of AlInN epilayers

  Journal of Applied Physics · 2008 · 10.1063/1.2898533

• Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

  Applied Physics Letters · 2007 · 10.1063/1.2424649

• Anomalous Ion Channeling in AlInN/GaN Bilayers: Determination of the Strain State

  Physical Review Letters · 2006 · 10.1103/physrevlett.97.085501

• Selectively excited photoluminescence from Eu-implanted GaN

  Applied Physics Letters · 2005 · 10.1063/1.2045551

• Damage formation and annealing at low temperatures in ion implanted ZnO

  Applied Physics Letters · 2005 · 10.1063/1.2126137

• Matched Pair of CoolMOS Transistor With SiC-Schottky Diode—Advantages in Application

  IEEE Transactions on Industry Applications · 2004 · 10.1109/tia.2004.834017

• High-temperature annealing and optical activation of Eu-implanted GaN

  Applied Physics Letters · 2004 · 10.1063/1.1801686

• COOLMOS/sup TM/-a new milestone in high voltage power MOS

  Journal · 2003 · 10.1109/ispsd.1999.764028

• Photoluminescence and lattice location of Eu and Pr implanted GaN samples

  Physica B Condensed Matter · 2001 · 10.1016/s0921-4526(01)00656-1

• Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition

  Applied Physics Letters · 2001 · 10.1063/1.1352699

• Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition

  Applied Physics Letters · 2000 · 10.1063/1.1328091

• COOLMOS^ -a new milestone in high voltage power MOS

  Medical Entomology and Zoology · 1999

Current projects

No projects listed.