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W. Knap

Researcher Next ID · RN-041285

Researcher · Engineering

Warsaw University of Technology

Warsaw, Poland

Accepting doctoral researchersFunding unknown
Works count
733
Citation count
14,983
H-index
61
i10-index
204

Research interests

Engineering
Physics and Astronomy
Terahertz technology and applications
Semiconductor Quantum Structures and Devices
Superconducting and THz Device Technology
GaN-based semiconductor devices and materials
Photonic and Optical Devices

Publications

  • Roadmap of Terahertz Imaging 2021

    Sensors · 2021 · https://doi.org/10.3390/s21124092

  • Efficient Terahertz detection in black-phosphorus nano-transistors with selective and controllable plasma-wave, bolometric and thermoelectric response

    Scientific Reports · 2016 · 10.1038/srep20474

  • Plasma-Wave Terahertz Detection Mediated by Topological Insulators Surface States

    Nano Letters · 2015 · 10.1021/acs.nanolett.5b02901

  • Black Phosphorus Terahertz Photodetectors

    Advanced Materials · 2015 · 10.1002/adma.201502052

  • High performance bilayer-graphene terahertz detectors

    Applied Physics Letters · 2014 · 10.1063/1.4864082

  • Observation of three-dimensional massless Kane fermions in a zinc-blende crystal

    Nature Physics · 2014 · https://doi.org/10.1038/nphys2857

  • Graphene field-effect transistors as room-temperature terahertz detectors

    Nature Materials · 2012 · https://doi.org/10.1038/nmat3417

  • Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors

    Nano Letters · 2011 · 10.1021/nl2030486

  • Broadband terahertz imaging with highly sensitive silicon CMOS detectors

    Optics Express · 2011 · https://doi.org/10.1364/oe.19.007827

  • A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS

    IEEE Journal of Solid-State Circuits · 2011 · 10.1109/jssc.2011.2165234

  • Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

    Applied Physics Letters · 2011 · 10.1063/1.3670321

  • Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects

    Journal of Applied Physics · 2011 · 10.1063/1.3632058

  • AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    Journal of Applied Physics · 2010 · 10.1063/1.3291101

  • Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

    Applied Physics Letters · 2006 · 10.1063/1.2358816

  • Detection of terahertz radiation in gated two-dimensional structures governed by dc current

    Physical Review B · 2006 · 10.1103/physrevb.73.125328

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    Applied Physics Letters · 2006 · https://doi.org/10.1063/1.2410215

  • Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

    Applied Physics Letters · 2005 · 10.1063/1.2005394

  • Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

    Applied Physics Letters · 2004 · https://doi.org/10.1063/1.1689401

  • Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    Applied Physics Letters · 2004 · https://doi.org/10.1063/1.1775034

  • Nonresonant detection of terahertz radiation in field effect transistors

    Journal of Applied Physics · 2002 · https://doi.org/10.1063/1.1468257

  • Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

    Applied Physics Letters · 2002 · 10.1063/1.1525851

  • Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

    Applied Physics Letters · 2002 · 10.1063/1.1473685

  • Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

    Applied Physics Letters · 2000 · 10.1063/1.126360

  • Weak antilocalization and spin precession in quantum wells

    Physical review. B, Condensed matter · 1996 · https://doi.org/10.1103/physrevb.53.3912

  • Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

    Applied Physics Letters · 1995 · 10.1063/1.114446

Current projects

    No projects listed.