W. Knap
Researcher Next ID · RN-041285
Researcher · Engineering
Warsaw University of Technology
Warsaw, Poland
- Works count
- 733
- Citation count
- 14,983
- H-index
- 61
- i10-index
- 204
Research interests
Publications
Roadmap of Terahertz Imaging 2021
Sensors · 2021 · https://doi.org/10.3390/s21124092
Efficient Terahertz detection in black-phosphorus nano-transistors with selective and controllable plasma-wave, bolometric and thermoelectric response
Scientific Reports · 2016 · 10.1038/srep20474
Plasma-Wave Terahertz Detection Mediated by Topological Insulators Surface States
Nano Letters · 2015 · 10.1021/acs.nanolett.5b02901
Black Phosphorus Terahertz Photodetectors
Advanced Materials · 2015 · 10.1002/adma.201502052
High performance bilayer-graphene terahertz detectors
Applied Physics Letters · 2014 · 10.1063/1.4864082
Observation of three-dimensional massless Kane fermions in a zinc-blende crystal
Nature Physics · 2014 · https://doi.org/10.1038/nphys2857
Graphene field-effect transistors as room-temperature terahertz detectors
Nature Materials · 2012 · https://doi.org/10.1038/nmat3417
Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
Nano Letters · 2011 · 10.1021/nl2030486
Broadband terahertz imaging with highly sensitive silicon CMOS detectors
Optics Express · 2011 · https://doi.org/10.1364/oe.19.007827
A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS
IEEE Journal of Solid-State Circuits · 2011 · 10.1109/jssc.2011.2165234
Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
Applied Physics Letters · 2011 · 10.1063/1.3670321
Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
Journal of Applied Physics · 2011 · 10.1063/1.3632058
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
Journal of Applied Physics · 2010 · 10.1063/1.3291101
Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors
Applied Physics Letters · 2006 · 10.1063/1.2358816
Detection of terahertz radiation in gated two-dimensional structures governed by dc current
Physical Review B · 2006 · 10.1103/physrevb.73.125328
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
Applied Physics Letters · 2006 · https://doi.org/10.1063/1.2410215
Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
Applied Physics Letters · 2005 · 10.1063/1.2005394
Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
Applied Physics Letters · 2004 · https://doi.org/10.1063/1.1689401
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
Applied Physics Letters · 2004 · https://doi.org/10.1063/1.1775034
Nonresonant detection of terahertz radiation in field effect transistors
Journal of Applied Physics · 2002 · https://doi.org/10.1063/1.1468257
Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors
Applied Physics Letters · 2002 · 10.1063/1.1525851
Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor
Applied Physics Letters · 2002 · 10.1063/1.1473685
Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
Applied Physics Letters · 2000 · 10.1063/1.126360
Weak antilocalization and spin precession in quantum wells
Physical review. B, Condensed matter · 1996 · https://doi.org/10.1103/physrevb.53.3912
Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN
Applied Physics Letters · 1995 · 10.1063/1.114446
Current projects
No projects listed.