D. Hommel

Research interests

Publications

• Composition mapping in InGaN by scanning transmission electron microscopy

  Ultramicroscopy · 2011 · https://doi.org/10.1016/j.ultramic.2011.04.009

• Temperature dependence of the thermal expansion of AlN

  Applied Physics Letters · 2009 · https://doi.org/10.1063/1.3089568

• Evidence for Two Mg Related Acceptors in GaN

  Physical Review Letters · 2009 · https://doi.org/10.1103/physrevlett.102.235501

• Direct observation of correlations between individual photon emission events of a microcavity laser

  Nature · 2009 · https://doi.org/10.1038/nature08126

• Superradiance of quantum dots

  Nature Physics · 2007 · https://doi.org/10.1038/nphys494

• Anisotropic strain and phonon deformation potentials in GaN

  Physical Review B · 2007 · https://doi.org/10.1103/physrevb.75.195217

• Temperature dependence of the thermal expansion of GaN

  Physical Review B · 2005 · https://doi.org/10.1103/physrevb.72.085218

• Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

  Journal of Applied Physics · 2005 · https://doi.org/10.1063/1.2128496

• Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

  Journal of Applied Physics · 2003 · https://doi.org/10.1063/1.1571217

• Direct Observation of Optically Injected Spin-Polarized Currents in Semiconductors

  Physical Review Letters · 2003 · https://doi.org/10.1103/physrevlett.90.216601

• Single-photon emission of CdSe quantum dots at temperatures up to 200 K

  Applied Physics Letters · 2002 · https://doi.org/10.1063/1.1515364

• Stark effect and polarizability in a single CdSe/ZnSe quantum dot

  Applied Physics Letters · 2001 · https://doi.org/10.1063/1.1389504

• The role of high-temperature island coalescence in the development of stresses in GaN films

  Applied Physics Letters · 2001 · https://doi.org/10.1063/1.1359780

• Spectral diffusion of the exciton transition in a single self-organized quantum dot

  Applied Physics Letters · 2000 · https://doi.org/10.1063/1.126196

• In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

  Journal of Crystal Growth · 2000 · https://doi.org/10.1016/s0022-0248(00)00696-5

• Strain relaxation in AlGaN under tensile plane stress

  Journal of Applied Physics · 2000 · https://doi.org/10.1063/1.1326852

• Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry

  Physical review. B, Condensed matter · 2000 · https://doi.org/10.1103/physrevb.62.7365

• X-ray diffraction analysis of the defect structure in epitaxial GaN

  Applied Physics Letters · 2000 · https://doi.org/10.1063/1.1314877

• Biexciton versus Exciton Lifetime in a Single Semiconductor Quantum Dot

  Physical Review Letters · 1999 · https://doi.org/10.1103/physrevlett.83.4417

• Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures

  Physical review. B, Condensed matter · 1999 · https://doi.org/10.1103/physrevb.60.8773

• Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe Single Quantum Dots

  Physical Review Letters · 1999 · https://doi.org/10.1103/physrevlett.82.1780

• Direct observation of free-exciton thermalization in quantum-well structures

  Physical review. B, Condensed matter · 1998 · https://doi.org/10.1103/physrevb.57.1390

• Single zero-dimensional excitons in CdSe/ZnSe nanostructures

  Applied Physics Letters · 1998 · https://doi.org/10.1063/1.122687

• E band-gap energy and lattice constant of ternary Zn1−xMgxSe as functions of composition

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.118132

• Relaxation and mosaicity profiles in epitaxial layers studied by high resolution X-ray diffraction

  Journal of Crystal Growth · 1994 · https://doi.org/10.1016/0022-0248(94)90724-2

Current projects

No projects listed.