R. Kudrawiec

Research interests

Publications

• Pressure-Driven Phase Transition in Two-Dimensional Perovskite MHy2PbBr4

  Chemistry of Materials · 2022 · 10.1021/acs.chemmater.2c01533

• Experimental and theoretical studies of native deep-level defects in transition metal dichalcogenides

  npj 2D Materials and Applications · 2022 · 10.1038/s41699-022-00350-4

• Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

  Applied Physics Reviews · 2020 · 10.1063/5.0025371

• Combined Temperature and Pressure Sensing Using Luminescent NaBiF4:Yb,Er Nanoparticles

  ACS Applied Nano Materials · 2020 · 10.1021/acsanm.0c00403

• Revealing the nature of photoluminescence emission in the metal-halide double perovskite Cs 2 AgBiBr 6

  Journal of Materials Chemistry C · 2019 · https://doi.org/10.1039/c9tc02402f

• Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance

  APL Materials · 2018 · 10.1063/1.5027157

• The electronic band structure of Ge 1− x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect

  Journal of Physics D Applied Physics · 2017 · 10.1088/1361-6463/aa67bf

• Photoacoustic and modulated reflectance studies of indirect and direct band gap in van der Waals crystals

  Scientific Reports · 2017 · 10.1038/s41598-017-15763-1

• Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

  Scientific Reports · 2016 · 10.1038/srep34082

• Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

  Journal of Applied Physics · 2016 · 10.1063/1.4954157

• Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

  Scientific Reports · 2016 · 10.1038/srep26663

• First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data

  Semiconductor Science and Technology · 2015 · 10.1088/0268-1242/30/9/094001

• Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells

  Journal of Applied Physics · 2014 · 10.1063/1.4904740

• High Bi content GaSbBi alloys

  Journal of Applied Physics · 2014 · 10.1063/1.4891217

• Electronic Band Structure of GaNxPyAs1−x−y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells

  Physical Review Applied · 2014 · 10.1103/physrevapplied.1.034007

• Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN 0.02 As 0.98 , Ga 0.95 In 0.05 N 0.02 As 0.98 , and GaN 0.02 As 0.90 Sb 0.08 layers

  Physical Review B · 2013 · 10.1103/physrevb.88.125201

• Ammonothermal GaN substrates: Growth accomplishments and applications

  physica status solidi (a) · 2011 · 10.1002/pssa.201001196

• Recent achievements in AMMONO-bulk method

  Journal of Crystal Growth · 2010 · 10.1016/j.jcrysgro.2010.04.001

• Nonpolar GaN substrates grown by ammonothermal method

  Applied Physics Letters · 2009 · 10.1063/1.3227893

• Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

  Journal of Applied Physics · 2009 · 10.1063/1.3168429

• Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations

  Review of Scientific Instruments · 2009 · 10.1063/1.3213613

• Recent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers

  IEEE Journal of Quantum Electronics · 2007 · 10.1109/jqe.2007.902301

• Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

  physica status solidi (b) · 2007 · 10.1002/pssb.200675620

• Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

  Journal of Physics Condensed Matter · 2004 · 10.1088/0953-8984/16/31/006

• Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells

  Applied Physics Letters · 2003 · 10.1063/1.1615673

Current projects

No projects listed.