T. Suski

Research interests

Publications

• Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

  Physical Review B · 2009 · 10.1103/physrevb.80.075202

• Thermal conductivity of GaN crystals in 4.2–300 K range

  Solid State Communications · 2003 · https://doi.org/10.1016/s0038-1098(03)00629-x

• Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

  Physical review. B, Condensed matter · 2001 · https://doi.org/10.1103/physrevb.64.233201

• Phonon Dispersion Curves in Wurtzite-Structure GaN Determined by Inelastic X-Ray Scattering

  Physical Review Letters · 2001 · https://doi.org/10.1103/physrevlett.86.906

• Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory

  Physical review. B, Condensed matter · 2000 · 10.1103/physrevb.61.16623

• High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

  Applied Physics Letters · 2000 · https://doi.org/10.1063/1.1318236

• Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

  Applied Physics Letters · 2000 · 10.1063/1.126360

• Observation of Native Ga Vacancies in GaN by Positron Annihilation

  Physical Review Letters · 1997 · https://doi.org/10.1103/physrevlett.79.3030

• Pressure Induced Deep Gap State of Oxygen in GaN

  Physical Review Letters · 1997 · 10.1103/physrevlett.78.3923

• Determination of the effective mass of GaN from infrared reflectivity and Hall effect

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.115730

• Lattice parameters of gallium nitride

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.118123

• Hardness and fracture toughness of bulk single crystal gallium nitride

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.117865

• Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.117105

• Strain-related phenomena in GaN thin films

  Physical review. B, Condensed matter · 1996 · 10.1103/physrevb.54.17745

• Mechanism of yellow luminescence in GaN

  Applied Physics Letters · 1995 · https://doi.org/10.1063/1.115098

• Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

  Applied Physics Letters · 1995 · https://doi.org/10.1063/1.114446

• Towards the Identification of the Dominant Donor in GaN

  Physical Review Letters · 1995 · https://doi.org/10.1103/physrevlett.75.296

• Thermal expansion of gallium nitride

  Journal of Applied Physics · 1994 · https://doi.org/10.1063/1.357273

• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

  Journal of Applied Physics · 1994 · https://doi.org/10.1063/1.357592

• Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties

  Physical review. B, Condensed matter · 1992 · https://doi.org/10.1103/physrevb.45.13307

Current projects

No projects listed.