I. Grzegory

Research interests

Publications

• Thermal conductivity of GaN crystals in 4.2–300 K range

  Solid State Communications · 2003 · https://doi.org/10.1016/s0038-1098(03)00629-x

• Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

  Physical review. B, Condensed matter · 2001 · https://doi.org/10.1103/physrevb.64.233201

• Phonon Dispersion Curves in Wurtzite-Structure GaN Determined by Inelastic X-Ray Scattering

  Physical Review Letters · 2001 · https://doi.org/10.1103/physrevlett.86.906

• Recent advances in defect-selective etching of GaN

  Journal of Crystal Growth · 2000 · https://doi.org/10.1016/s0022-0248(99)00669-7

• High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

  Applied Physics Letters · 2000 · https://doi.org/10.1063/1.1318236

• Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

  Applied Physics Letters · 1999 · https://doi.org/10.1063/1.124919

• Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

  Physical review. B, Condensed matter · 1999 · 10.1103/physrevb.60.1471

• Thermal properties of indium nitride

  Journal of Physics and Chemistry of Solids · 1998 · https://doi.org/10.1016/s0022-3697(97)00222-9

• Chemical polishing of bulk and epitaxial GaN

  Journal of Crystal Growth · 1997 · https://doi.org/10.1016/s0022-0248(97)00320-5

• Observation of Native Ga Vacancies in GaN by Positron Annihilation

  Physical Review Letters · 1997 · https://doi.org/10.1103/physrevlett.79.3030

• Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

  Journal of Crystal Growth · 1997 · https://doi.org/10.1016/s0022-0248(97)00072-9

• Lattice parameters of gallium nitride

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.118123

• Elastic constants of gallium nitride

  Journal of Applied Physics · 1996 · https://doi.org/10.1063/1.361236

• Hardness and fracture toughness of bulk single crystal gallium nitride

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.117865

• Determination of the effective mass of GaN from infrared reflectivity and Hall effect

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.115730

• Exciton region reflectance of homoepitaxial GaN layers

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.117892

• Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

  Solid State Communications · 1996 · https://doi.org/10.1016/0038-1098(95)00816-0

• Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

  Applied Physics Letters · 1995 · 10.1063/1.114446

• Mechanism of yellow luminescence in GaN

  Applied Physics Letters · 1995 · 10.1063/1.115098

• III–V Nitrides—thermodynamics and crystal growth at high N2 pressure

  Journal of Physics and Chemistry of Solids · 1995 · https://doi.org/10.1016/0022-3697(94)00257-6

• Towards the Identification of the Dominant Donor in GaN

  Physical Review Letters · 1995 · https://doi.org/10.1103/physrevlett.75.296

• Thermal expansion of gallium nitride

  Journal of Applied Physics · 1994 · 10.1063/1.357273

• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

  Journal of Applied Physics · 1994 · https://doi.org/10.1063/1.357592

• Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure

  Physical review. B, Condensed matter · 1992 · https://doi.org/10.1103/physrevb.45.83

• Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties

  Physical review. B, Condensed matter · 1992 · https://doi.org/10.1103/physrevb.45.13307

Current projects

No projects listed.