Michał Boćkowski

Researcher Next ID · RN-041485

Researcher · Engineering

Warsaw, Poland

Accepting doctoral researchersFunding unknown

Research interests

Engineering

Materials Science

Physics and Astronomy

GaN-based semiconductor devices and materials

Semiconductor materials and devices

Ga2O3 and related materials

ZnO doping and properties

Semiconductor Quantum Structures and Devices

Thermal conductivity of GaN crystals in 4.2–300 K range
Solid State Communications · 2003 · https://doi.org/10.1016/s0038-1098(03)00629-x
Thermal properties of indium nitride
Journal of Physics and Chemistry of Solids · 1998 · https://doi.org/10.1016/s0022-3697(97)00222-9
Lattice parameters of gallium nitride
Applied Physics Letters · 1996 · https://doi.org/10.1063/1.118123
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
Solid State Communications · 1996 · https://doi.org/10.1016/0038-1098(95)00816-0
Mechanism of yellow luminescence in GaN
Applied Physics Letters · 1995 · https://doi.org/10.1063/1.115098
III–V Nitrides—thermodynamics and crystal growth at high N2 pressure
Journal of Physics and Chemistry of Solids · 1995 · https://doi.org/10.1016/0022-3697(94)00257-6

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