S. Porowski

Research interests

Publications

• High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

  Applied Physics Letters · 2000 · https://doi.org/10.1063/1.1318236

• Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

  Applied Physics Letters · 1999 · 10.1063/1.124919

• Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

  Physical review. B, Condensed matter · 1999 · 10.1103/physrevb.60.1471

• Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

  Applied Physics Letters · 1998 · 10.1063/1.121942

• Thermal properties of indium nitride

  Journal of Physics and Chemistry of Solids · 1998 · https://doi.org/10.1016/s0022-3697(97)00222-9

• Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

  Journal of Crystal Growth · 1997 · 10.1016/s0022-0248(97)00072-9

• Observation of Native Ga Vacancies in GaN by Positron Annihilation

  Physical Review Letters · 1997 · https://doi.org/10.1103/physrevlett.79.3030

• Chemical polishing of bulk and epitaxial GaN

  Journal of Crystal Growth · 1997 · 10.1016/s0022-0248(97)00320-5

• Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

  Applied Physics Letters · 1997 · 10.1063/1.120163

• High pressure growth of GaN — new prospects for blue lasers

  Journal of Crystal Growth · 1996 · 10.1016/0022-0248(96)00116-9

• Determination of the effective mass of GaN from infrared reflectivity and Hall effect

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.115730

• Hardness and fracture toughness of bulk single crystal gallium nitride

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.117865

• Exciton region reflectance of homoepitaxial GaN layers

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.117892

• Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

  Solid State Communications · 1996 · https://doi.org/10.1016/0038-1098(95)00816-0

• Lattice parameters of gallium nitride

  Applied Physics Letters · 1996 · https://doi.org/10.1063/1.118123

• Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

  Applied Physics Letters · 1995 · 10.1063/1.114446

• III–V Nitrides—thermodynamics and crystal growth at high N2 pressure

  Journal of Physics and Chemistry of Solids · 1995 · https://doi.org/10.1016/0022-3697(94)00257-6

• Mechanism of yellow luminescence in GaN

  Applied Physics Letters · 1995 · 10.1063/1.115098

• Towards the Identification of the Dominant Donor in GaN

  Physical Review Letters · 1995 · https://doi.org/10.1103/physrevlett.75.296

• Thermal expansion of gallium nitride

  Journal of Applied Physics · 1994 · 10.1063/1.357273

• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

  Journal of Applied Physics · 1994 · 10.1063/1.357592

• Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

  Journal of Crystal Growth · 1984 · 10.1016/0022-0248(84)90070-8

Current projects

No projects listed.