Asen Asenov

Research interests

Publications

• Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

  IEEE Electron Device Letters · 2019 · 10.1109/led.2019.2931839

• Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

  Nature · 2014 · https://doi.org/10.1038/nature13951

• Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

  Nature · 2014 · https://doi.org/10.1038/nature13951

• Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization

  IEEE Transactions on Electron Devices · 2014 · 10.1109/ted.2014.2363117

• Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics

  Chemistry - A European Journal · 2013 · 10.1002/chem.201301631

• Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

  · 2012 · 10.1109/irps.2012.6241841

• Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2011 · 10.1109/tcad.2011.2107990

• Statistical variability and reliability in nanoscale FinFETs

  Journal · 2011 · https://doi.org/10.1109/iedm.2011.6131494

• Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study

  IEEE Electron Device Letters · 2010 · 10.1109/led.2010.2069080

• Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

  IEEE Transactions on Electron Devices · 2009 · 10.1109/ted.2009.2021357

• Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET

  IEEE Electron Device Letters · 2008 · 10.1109/led.2008.922978

• Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

  IEEE Electron Device Letters · 2008 · 10.1109/led.2008.2001030

• A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

  IEEE Transactions on Electron Devices · 2007 · 10.1109/ted.2007.902867

• Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

  IEEE Electron Device Letters · 2007 · 10.1109/led.2007.910009

• Simulation of Statistical Variability in Nano MOSFETs

  · 2007 · 10.1109/vlsit.2007.4339737

• Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

  IEEE Transactions on Electron Devices · 2006 · https://doi.org/10.1109/ted.2006.885683

• Where Do the Dopants Go?

  Science · 2005 · 10.1126/science.1111104

• The impact of random doping effects on CMOS SRAM cell

  · 2004 · 10.1109/esscir.2004.1356657

• Si/SiGe heterostructure parameters for device simulations

  Semiconductor Science and Technology · 2004 · 10.1088/0268-1242/19/10/002

• Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

  IEEE Transactions on Electron Devices · 2003 · https://doi.org/10.1109/ted.2003.813457

• RTS amplitudes in decananometer MOSFETs: 3-D simulation study

  IEEE Transactions on Electron Devices · 2003 · 10.1109/ted.2003.811418

• Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

  IEEE Transactions on Electron Devices · 2003 · https://doi.org/10.1109/ted.2003.815862

• Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

  IEEE Transactions on Electron Devices · 2002 · 10.1109/16.974757

• Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

  IEEE Transactions on Electron Devices · 2001 · 10.1109/16.915703

• Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

  IEEE Transactions on Electron Devices · 1999 · 10.1109/16.777162

• Hierarchical approach to "atomistic" 3-D MOSFET simulation

  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1999 · 10.1109/43.806802

Current projects

No projects listed.